v rrm = 50 v - 600 v i f = 40 a features ? high surge capability do-5 package ? types up to 600 v v rrm parameter symbol 1n1183 (r) 1n1184 (r ) 1n1188 (r) 1n1190 (r ) unit repetitive peak reverse v 50 100 400 600 v 1N1183A thru 1n1190ar 200 1n1186 (r) maximum ratings, at t j = 25 c, unless otherwise specified silicon standard recover y diode conditions voltage v rrm 50 100 400 600 v rms reverse voltage v rms 35 70 280 420 v dc blocking voltage v dc 50 100 400 600 v continuous forward current i f 40 40 40 40 a operating temperature t j -65 to 200 -65 to 200 -65 to 200 -65 to 200 c storage temperature t stg -65 to 200 -65 to 200 -65 to 200 -65 to 200 c parameter symbol 1n1183 (r) 1n1184 (r ) 1n1188 (r) 1n1190 (r ) unit diode forward voltage 1.1 1.1 1.1 1.1 10 10 10 10 a 15 15 15 15 ma thermal characteristics thermal resistance, junction - case r thjc 1.25 1.25 1.25 1.25 c/w 200 a reverse current i r v f 800 800 800 -65 to 200 t c = 25 c, t p = 8.3 ms v r = 50 v, t j = 25 c i f = 40 a, t j = 25 c t c 150 c conditions 200 140 800 800 -65 to 200 40 electrical characteristics, at tj = 25 c, unless otherwise specified 10 1n1186 (r) 1.25 v r = 50 v, t j = 140 c 1.1 v 15 surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com 1
1N1183A thru 1n1190ar www.genesicsemi.com 2
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